Ma, Jin-Seock Koo, Hyun Cheol Chang, Joonyeon Kim, Hyung-Jun Han, Suk-Hee Eom, Jonghwa Kim, Chulwoo 2024-01-20T22:35:43Z 2024-01-20T22:35:43Z 2021-09-03 2008-09 0374-4884 https://pubs.kist.re.kr/handle/201004/133187 The spin Hall effect is observed for an InAs-based two-dimensional electron gas. Due to the spin Hall effect, the motion of the spin-polarized electrons deviates and causes a charge accumulation at the edge of the InAs channel. A spin imbalance between spin up and down is induced by spin injection from the Pd/CoFe multilayer, which is perpendicularly magnetized. This charge accumulation induces a transverse voltage in the absence of an external magnetic field. The observed spin Hall voltage decreases with increasing temperature and shows the same tendency as the spin diffusion length. English KOREAN PHYSICAL SOC Spin Hall effect induced by a Pd/CoFe multilayer in a semiconductor channel Article 10.3938/jkps.53.1357 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.3, pp.1357 - 1361 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 53 3 1357 1361 scie scopus kci ART001472465 000259194800010 2-s2.0-53549103851 Physics, Multidisciplinary Physics Article; Proceedings Paper spin Hall effect Pd/CoFe multilayer two-dimensional electron gas