Cho, Kyung-Hoon Choi, Chang-Hak Choi, Joo-Young Seong, Tae-Geun Nahm, Sahn Kang, Chong-Yun Yoon, Seok-Jin Kim, Jong-Hee 2024-01-20T22:35:47Z 2024-01-20T22:35:47Z 2021-09-03 2008-09 0741-3106 https://pubs.kist.re.kr/handle/201004/133190 Bi5Nb3O15 (B5N3) films grown under a low oxygen partial pressure (OP) of 1.7 mtorr showed a high leakage current density of 0.1 A/cm(2) at 1.0 MV/cm. However, the leakage current density decreased with increasing OP to a minimum of 5.8 x 10(-9) A/cm(2) for the film grown under 5.1 mtorr due to the decreased number of oxygen vacancies. This film also showed an improved breakdown field of 2.2 MV/cm and a large capacitance density of 24.9 fF/mu m(2). The electrical properties of the film, however, deteriorated with a further increase in OP, which is probably due to the formation of oxygen interstitial ions. Therefore, superior electrical properties for the B5N3 film can be obtained by careful control of OP. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC MIM CAPACITORS HFO2 Effect of oxygen pressure on the electrical properties of Bi5Nb3O15 films grown by RF magnetron sputtering Article 10.1109/LED.2008.2001476 1 IEEE ELECTRON DEVICE LETTERS, v.29, no.9, pp.984 - 987 IEEE ELECTRON DEVICE LETTERS 29 9 984 987 scie scopus 000259573400005 2-s2.0-50649102398 Engineering, Electrical & Electronic Engineering Article MIM CAPACITORS HFO2 Bi5Nb3O15 (B5N3) high dielectric constant leakage current density metal-insulator-metal (MIM) capacitor temperature coefficient of capacitance (TCC) voltage coefficient of capacitance (VCC)