Il Jung, Soon Yeo, Hyun Young Yun, Ilgu Cho, Sung M. Han, Ii Ki Lee, Joo In 2024-01-20T22:35:57Z 2024-01-20T22:35:57Z 2021-09-03 2008-09 1533-4880 https://pubs.kist.re.kr/handle/201004/133198 We investigated the effects of different growth conditions and surface passivation on the growth of CdSe quantum dots (QDs). The synthesis of CdSe QDs by pyrolysis of organometallic reagents was performed by using the hot-matrix method. In order to modify the size and quality of CdSe QDs, we controlled the growth temperature from 250 degrees C to 350 degrees C and the relative amount of trioctylphosphin (as the ligand of the Cd and Se precursors) to be injected into the coordinating solvent trioctylphosphineoxide. Moreover, an effective surface passivation of mono-disperse CdSe QDs was achieved by overcoating them with a larger band gap material, such as ZnS. English AMER SCIENTIFIC PUBLISHERS TEMPERATURE SIZE NANOCRYSTALS Optical Characteristics of CdSe Quantum Dots Depending on Growth Conditions and Surface Passivation Article 10.1166/jnn.2008.IC81 1 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.8, no.9, pp.4899 - 4902 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 8 9 4899 4902 scie scopus 000260776900117 2-s2.0-55849112331 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article; Proceedings Paper TEMPERATURE SIZE NANOCRYSTALS CdSe CdSe/ZnS Quantum Dots Photoluminescence