Gujar, T. P. Shinde, V. R. Park, Jong-Won Lee, Hyun Kyung Jung, Kwang-Deog Joo, Oh-Shim 2024-01-20T22:36:15Z 2024-01-20T22:36:15Z 2021-09-02 2008-09 0013-4651 https://pubs.kist.re.kr/handle/201004/133213 We report an electrochemical approach to form crystalline CuInSe2 (CIS) films onto indium-tin-oxide substrates via thermal treatment to Se-coated Cu-In alloy. The simultaneous deposition of Cu-In alloy with optimum thickness was obtained by an electrochemical method from a mixture of aqueous solutions of CuSO4 and In-2(SO4)(3) at constant potential. Further, the electrochemical method was used for deposition of elemental Se onto the priorly deposited Cu-In alloy film. To produce CIS films, Se-coated Cu-In alloy films were annealed in argon atmosphere at different temperatures ca. 350-450 degrees C for 30 min. The Cu-In alloy, Se-coated Cu-In alloy, and thermally treated films were characterized using X-ray diffraction to identify the phases and scanning electron microscopy to observe the surface morphology. (C) 2008 The Electrochemical Society. English ELECTROCHEMICAL SOC INC THIN-FILMS COMPLEXING AGENT IONIC LIQUID SOLAR-CELL ELECTRODEPOSITION GROWTH INDIUM COPPER ALLOY PRECURSORS Electrochemical approach for selenization of stacked Cu-In layers for formation of crystalline CuInSe2 Article 10.1149/1.2957923 1 JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.10, pp.E131 - E135 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 155 10 E131 E135 scie scopus 000258976500041 2-s2.0-51849129236 Electrochemistry Materials Science, Coatings & Films Electrochemistry Materials Science Article THIN-FILMS COMPLEXING AGENT IONIC LIQUID SOLAR-CELL ELECTRODEPOSITION GROWTH INDIUM COPPER ALLOY PRECURSORS