Joo, K. S. Chun, S. H. Lim, J. Y. Song, J. D. Chang, J. Y. 2024-01-20T23:01:18Z 2024-01-20T23:01:18Z 2021-09-03 2008-08 1386-9477 https://pubs.kist.re.kr/handle/201004/133274 The large electron mobility at room temperature and the absence of Schottky barrier to metals make InAs two-dimensional electron gas (2DEG) a good candidate for SPIN-FET (FET-field-effect-transistor) applications. So far the growth was done either on the InAlAs epilayers compositionally matched to InP substrates, or on Sb-based compound semiconductors. Here we aim to grow InAs 2DEG on GaAs substrates by using a strain-relaxing buffer layer. We introduce In(0.4)Al(0.6)As glue layer to the metamorphic structure and investigate the physical properties of InAlAs/InGaAs multi-quantum-well (MQW) structures via X-ray diffraction, transmission electron microscopy, and photoluminescence. We find that the use of As dimer instead of tetramer and the choice of proper growth temperature are essential for successful growth. InAs-inserted-channel InAlAs/InGaAs inverted high-electron-mobility transistor (HEMT) structures show promising results for SPIN-FET application. (c) 2008 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV SUBSTRATE LAYERS Metamorphic growth of InAlAs/InGaAs MQW and InAsHEMT structures on GaAs Article 10.1016/j.physe.2008.01.014 1 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.40, no.9, pp.2874 - 2878 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 40 9 2874 2878 scie scopus 000257626100006 2-s2.0-44649183472 Nanoscience & Nanotechnology Physics, Condensed Matter Science & Technology - Other Topics Physics Article SUBSTRATE LAYERS metamorphic growth MBE InAs 2DEG SPIN-FET