Park, Jae-Wan Yang, Min Kyu Lee, Jeon-Kook 2024-01-20T23:01:21Z 2024-01-20T23:01:21Z 2021-09-03 2008-08 1099-0062 https://pubs.kist.re.kr/handle/201004/133277 The electrode dependence of bipolar resistive switching in SrZrO3:Cr-based metal-oxide-metal (MOM) structures was investigated. The Pt/SrZrO3:Cr/SrRuO3 structures showed bipolar resistive switching, and the polarities of external bias for set/reset processes were determined by the junction between SrZrO3:Cr film and SrRuO3 electrode. The MOM structure consisting of noble metal electrodes (Pt/SrZrO3:Cr/Pt) did not show resistive switching, while the TiOxNy-inserted MOM structure (Pt/SrZrO3:Cr/TiOxNy/Pt) exhibited reproducible resistive switching behavior. The results suggest that resistive switching behaviors are related to the formation and annihilation of oxygen vacancies within local conduction paths by electric-field-induced oxygen ion migration. English ELECTROCHEMICAL SOC INC DIFFUSION-BARRIERS Electrode dependence of bipolar resistive switching in SrZrO3 : Cr perovskite film-based memory devices Article 10.1149/1.2937460 1 ELECTROCHEMICAL AND SOLID STATE LETTERS, v.11, no.8, pp.H226 - H229 ELECTROCHEMICAL AND SOLID STATE LETTERS 11 8 H226 H229 scie scopus 000256706100024 2-s2.0-45249103712 Electrochemistry Materials Science, Multidisciplinary Electrochemistry Materials Science Article DIFFUSION-BARRIERS resistive switching memory device SrZrO3 Cr doping electrode dependency nonvolatile memory