Kim, Dong Hun Cho, Nam Gyu Kim, Ho-Gi Kim, Hyun-Suk Hong, Jae-Min Kim, Il-Doo 2024-01-20T23:02:06Z 2024-01-20T23:02:06Z 2021-09-03 2008-07-21 0003-6951 https://pubs.kist.re.kr/handle/201004/133313 The authors report on the dielectric and leakage current properties of room temperature grown MgO-Ba0.6Sr0.4TiO3 (MgO-BST) composite thin films to be utilized InGaZnO4 thin films transistors (TFTs) fabricated on a polyethylene terephthalate (PET) substrate. The InGaZnO4 TFTs with MgO-BST gate dielectrics exhibited low operation voltage of 4 V, high on/off current ratio of 4.13x10(6), and high field effect mobility of 10.86 cm(2)/V s. These results verify that a room temperature grown MgO-BST gate dielectric is a good candidate for producing high performance InGaZnO4 TFTs on plastic substrates. (C) 2008 American Institute of Physics. English AMER INST PHYSICS AMORPHOUS OXIDE SEMICONDUCTORS Low voltage operating InGaZnO4 thin film transistors using high-k MgO-Ba0.6Sr0.4TiO3 composite gate dielectric on plastic substrate Article 10.1063/1.2954014 1 APPLIED PHYSICS LETTERS, v.93, no.3 APPLIED PHYSICS LETTERS 93 3 scie scopus 000257968700057 2-s2.0-48249112642 Physics, Applied Physics Article AMORPHOUS OXIDE SEMICONDUCTORS