Oh, Do-Hyun Lee, Soojin Cho, Woon-Jo Kim, Tae Whan 2024-01-20T23:02:23Z 2024-01-20T23:02:23Z 2021-09-03 2008-07-01 0022-0248 https://pubs.kist.re.kr/handle/201004/133327 Dependence of the stored charges and the tunneling voltages on the tunneling SiO2 thickness for Si nanoparticles embedded in a SiO2 layer formed by the sonochemical method was investigated by using electrostatic force microscopy (EFM) measurements. Bright-field transmission electron microscopy images showed that Si nanoparticles were embedded in a SiO2 layer. EFM images for the Si nanoparticles embedded in a SiO2 layer under applied bias voltages showed that the localized charges remained in the Si nanoparticles embedded in. a SiO2 layer. The stored charge in the Si nanoparticles embedded in a SiO2 layer increased with a decrease in the tunneling SiO2 thickness. While the threshold tunneling voltage increased with an increase in the tunneling oxide thickness, the mean amplitude of the tunneling voltage increased with a decrease in the thickness of the tunneling SiO2 layer. (C) 2008 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV SILICON NANOPARTICLES FORCE MICROSCOPY RETENTION-TIME NANOCRYSTALS MEMORY INJECTION CHANNEL Dependence of the stored charges and tunneling voltages on the tunneling SiO2 thickness for Si nanoparticles embedded in a SiO2 layer Article 10.1016/j.jcrysgro.2007.12.068 1 JOURNAL OF CRYSTAL GROWTH, v.310, no.14, pp.3290 - 3293 JOURNAL OF CRYSTAL GROWTH 310 14 3290 3293 scie scopus 000257556700007 2-s2.0-44749092966 Crystallography Materials Science, Multidisciplinary Physics, Applied Crystallography Materials Science Physics Article SILICON NANOPARTICLES FORCE MICROSCOPY RETENTION-TIME NANOCRYSTALS MEMORY INJECTION CHANNEL nanostructures nanomaterials semiconducting silicon