Bae, Heesun Im, Seongil Song, Jonghan 2024-01-20T23:03:00Z 2024-01-20T23:03:00Z 2021-09-03 2008-07 0021-4922 https://pubs.kist.re.kr/handle/201004/133357 We report on the fabrication of a photo-detector and a photo-inverter adopting ZnO thin-film transistors (TFTs) that have been electrically isolated by implanting B ions onto peripheral ZnO area around active ZnO channel. Our isolated ZnO-TFT exhibited a fine mobility of 0.8cm(2)/(V.s) and on/off current ratio of similar to 10(4). Since the device also showed quite a high threshold voltage of 21 V, it was effective to be a photo-detector under a zero gate bias. When our photo-devices were composed of a ZnO-TFT and a 100M Omega resistor, a minimum response time of similar to 5 ms under 364nm ultraviolet light was achieved, thereby dynamically showing photo-inverting and detecting behaviors. English IOP PUBLISHING LTD Low-voltage ultraviolet detectors using ZnO thin-film transistor isolated by B ion implantation Article 10.1143/JJAP.47.5362 1 JAPANESE JOURNAL OF APPLIED PHYSICS, v.47, no.7, pp.5362 - 5364 JAPANESE JOURNAL OF APPLIED PHYSICS 47 7 5362 5364 scie scopus 000259550600016 2-s2.0-55149098357 Physics, Applied Physics Article ZnO isolation technology ion implantation thin-film transistors photodetectors