Cho, Kyung-Hoon Choi, Chang-Hak Hong, Kyoung Pyo Choi, Joo-Young Jeong, Young Hun Nahm, Sahn Kang, Chong-Yun Yoon, Seok-Jin Lee, Hwack-Joo 2024-01-20T23:03:03Z 2024-01-20T23:03:03Z 2021-09-03 2008-07 0741-3106 https://pubs.kist.re.kr/handle/201004/133360 Amorphous Bi(5)Nb(3)O(15)(B(5)N(3)) film grown at 300 degrees C showed a high-k value of 71 at 100 kHz, and similar k value was observed at 0.5-5.0 GHz. The 80-nm-thick film exhibited a high capacitance density of 7.8 fF/mu m(2) and a low dissipation factor, of 0.95% at 100 kHz with a low leakage-current density of 1.23 nA/cm(2) at 1 V. The quadratic and linear voltage coefficient of capacitances of the B(5)N(3) film were 438 ppm/V(2) and 456 ppm/V, respectively, with a low temperature coefficient of capacitance of 309 ppm/degrees C at 100 kHz. These results confirmed the potential of the amorphous B(5)N(3) film as a good candidate material for a high-performance metal-insulator-metal capacitors. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC DIELECTRICS HFO2 Electrical properties of amorphous Bi(5)Nb(3)O(15) thin film for RF MIM capacitors Article 10.1109/LED.2008.2000911 1 IEEE ELECTRON DEVICE LETTERS, v.29, no.7, pp.684 - 687 IEEE ELECTRON DEVICE LETTERS 29 7 684 687 scie scopus 000257626000010 2-s2.0-47249120464 Engineering, Electrical & Electronic Engineering Article DIELECTRICS HFO2 Bi(5)Nb(3)O(15) high-k metal-insulator-metal (MIM) capacitor temperature coefficient of capacitance (TCC) voltage coefficient of capacitance (VCC)