Yuk, J. A. Son, D. I. Kim, T. W. Kim, J. Y. Choi, W. K. 2024-01-20T23:03:14Z 2024-01-20T23:03:14Z 2021-09-03 2008-07 0374-4884 https://pubs.kist.re.kr/handle/201004/133369 The effects of thermal annealing on the microstructural properties of ZnO thin films grown on p-InP (100) substrates were investigated by using X-ray diffraction (XRD), atomic force microscopy (AFM), transmission electron microscopy (TEM), selected-area electron diffraction (SAED) and electron energy loss spectroscopy (EELS) measurements. XRD, AFM, TEM, SAED and EELS results showed that ZnO amorphous layers were formed in the top and the bottom regions of the ZnO thin films due to the thermal treatment. The formation of the ZnO amorphous layer in the ZnO thin film annealed at 600 degrees C was attributed to the accumulation of Zu vacancy layers. The formation of an amorphous layer in the top surface of the ZnO film improved the surface morphology of the ZnO film. The c-axis orientation of the ZnO films became more preferential with increasing annealing temperature. English KOREAN PHYSICAL SOC OPTICAL-PROPERTIES LASERS LAYER Annealing effects on the microstructural properties of the ZnO thin films grown on p-InP (100) substrates Article 10.3938/jkps.53.357 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.1, pp.357 - 360 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 53 1 357 360 scie scopus kci ART001464078 000257664700077 2-s2.0-49649102402 Physics, Multidisciplinary Physics Article; Proceedings Paper OPTICAL-PROPERTIES LASERS LAYER ZnO thin films p-InP substrates rapid thermal treatment microstructural properties amorphous layer