Shim, J. H. Raman, K. V. Park, Y. J. Santos, T. S. Miao, G. X. Satpati, B. Moodera, J. S. 2024-01-20T23:03:50Z 2024-01-20T23:03:50Z 2021-09-03 2008-06-06 0031-9007 https://pubs.kist.re.kr/handle/201004/133397 We directly measured a spin diffusion length (lambda(s)) of 13.3 nm in amorphous organic semiconductor (OS) rubrene (C42H28) by spin polarized tunneling. In comparison, no spin-conserved transport has been reported in amorphous Si or Ge. Absence of dangling bond defects can explain the spin transport behavior in amorphous OS. Furthermore, when rubrene barriers were grown on a seed layer, the elastic tunneling characteristics were greatly enhanced. Based on our findings, lambda(s) in single-crystalline rubrene can be expected to reach even millimeters, showing the potential for organic spintronics development. English AMER PHYSICAL SOC MAGNETORESISTANCE STATES METAL Large spin diffusion length in an amorphous organic semiconductor Article 10.1103/PhysRevLett.100.226603 1 PHYSICAL REVIEW LETTERS, v.100, no.22 PHYSICAL REVIEW LETTERS 100 22 scie scopus 000256528400035 2-s2.0-44949128909 Physics, Multidisciplinary Physics Article MAGNETORESISTANCE STATES METAL organic semiconductor spin diffusion length rubrene barrier organic spintronics magnetic tunnel junctions