Puspitasari, Indra Gujar, T. P. Jung, Kwang-Deog Joo, Oh-Shim 2024-01-20T23:31:18Z 2024-01-20T23:31:18Z 2021-08-31 2008-05 0924-0136 https://pubs.kist.re.kr/handle/201004/133540 Indium sulfide thin films consisting of porous network of nanoplatelets, have been deposited using chemical bath deposition (CBD) method onto the tin-doped indium oxide (ITO) coated glass substrate. Aqueous solutions of indium sulfate and thioacetamide have been used as indium and sulfur precursors. As a complexing agent, acetic acid was used. The chemically deposited indium sulfide thin films were examined for their structural, surface morphological and optical characterizations. The X-ray diffraction analysis revealed the formation of the cubic beta-In2S3 onto the substrate. From scanning electron micrograph, it is observed that the surface of substrate is covered by nanoporous platelets type morphology. The optical studies showed a direct band gap of 2.84 eV for indium sulfide platelets. Photoelectrochemical characterization shows that indium sulfide thin film is an n-type semiconductor material. (C) 2008 Published by Elsevier B.V. English Elsevier BV Simple chemical method for nanoporous network of In2S3 platelets for buffer layer in CIS solar cells Article 10.1016/j.jmatprotec.2007.11.307 1 Journal of Materials Processing Technology, v.201, no.1-3, pp.775 - 779 Journal of Materials Processing Technology 201 1-3 775 779 N scopus 000255737600145 2-s2.0-41549111527 Engineering, Industrial Engineering, Manufacturing Materials Science, Multidisciplinary Engineering Materials Science Article; Proceedings Paper THIN-FILMS BATH DEPOSITION INDIUM In2S3 chemical bath deposition SEM photochemical analysis