Yuk, J. M. Lee, J. Y. Jung, J. H. Lee, D. U. Kim, T. W. Son, D. I. Choi, W. K. 2024-01-20T23:31:29Z 2024-01-20T23:31:29Z 2021-09-03 2008-04-15 0021-8979 https://pubs.kist.re.kr/handle/201004/133549 The x-ray diffraction patterns, transmission electron microscopy images, and selected-area electron diffraction patterns for the ZnO/Si heterostructures annealed at 900 degrees C showed that orthorhombic ZnSiO3 nanoparticles were formed in the amorphous layer between the ZnO film and the Si substrate, resulting from the interdiffusion between the ZnO film and the Si substrate due to thermal treatment. Auger electron spectroscopy depth profiles for the ZnO/Si heterostructures annealed at 900 degrees C demonstrated the formation of amorphous Zn2xSi1-xO2, an interfacial layer. A formation mechanism for the orthorhombic ZnSiO3 nanoparticles embedded in the amorphous Zn2xSi1-xO2 layer is described on the basis of the experimental results. (c) 2008 American Institute of Physics. English AMER INST PHYSICS QUANTUM DOTS TEMPERATURE ENERGY GATE Formation mechanism of ZnSiO3 nanoparticles embedded in an amorphous interfacial layer between a ZnO thin film and an n-Si (001) substrate due to thermal treatment Article 10.1063/1.2902477 1 JOURNAL OF APPLIED PHYSICS, v.103, no.8 JOURNAL OF APPLIED PHYSICS 103 8 scie scopus 000255456200051 2-s2.0-43049136251 Physics, Applied Physics Article QUANTUM DOTS TEMPERATURE ENERGY GATE