Yoon, J. J. Ghong, T. H. Byun, J. S. Kim, Y. D. Aspnes, D. E. Kim, H. J. Chang, Y. C. Song, J. D. 2024-01-20T23:31:34Z 2024-01-20T23:31:34Z 2021-09-03 2008-04-14 0003-6951 https://pubs.kist.re.kr/handle/201004/133553 Pseudodielectric functions <epsilon > of InxAl1-xAs ternary alloy films were determined from 1.5 to 6.0 eV by spectroscopic ellipsometry. We minimized overlayer effects by performing wet-chemical etching to more accurately determine intrinsic bulk dielectric responses. Energies of the E-1, E-1+Delta(1), E-0&apos;, E-2, E-2+Delta(2) and E-2&apos; critical points (CPs) were identified by band structure calculations of the linear augmented Slater-type orbital method. These calculations also showed a crossing of the E-0&apos; and E-2 CP structures with increasing In composition and a new saddle point in the AlAs band structure. (C) 2008 American Institute of Physics. English AMER INST PHYSICS TEMPERATURE-DEPENDENCE DIELECTRIC FUNCTION PARAMETERS GAAS INP INAS Optical properties of InxAl1-xAs alloy films Article 10.1063/1.2909546 1 APPLIED PHYSICS LETTERS, v.92, no.15 APPLIED PHYSICS LETTERS 92 15 scie scopus 000255117100028 2-s2.0-42349088123 Physics, Applied Physics Article TEMPERATURE-DEPENDENCE DIELECTRIC FUNCTION PARAMETERS GAAS INP INAS InAlAs ellipsometry