Lee, Jungil Yu, Byung-Yong Lee, Chul Ho Yi, Gyu-Chul Son, Seung Hun Kim, Gyu-Tae Ghibaudo, Gerard 2024-01-20T23:32:15Z 2024-01-20T23:32:15Z 2021-09-03 2008-04 1386-9477 https://pubs.kist.re.kr/handle/201004/133587 We report the results of low-frequency noise characterizations of back-gate n-channel ZnO nanorod field-effect transistor (FET) structure at room temperature. The noise in source-drain current was measured at zero gate bias and different source-drain biases. The power spectral density of noise current showed, in general, 1/f behavior with some variations. The power index of current dependence of the noise density at 10 Hz was about 1.5. The Hooge parameter obtained from the noise density at 10 Hz was comparable to or smaller than carbon nanotube transistors and much higher than those of silicon nanowires and conventional silicon transistors, indicating that special attention should be addressed to low-frequency noise in device applications. Possible noise sources are discussed with different models. (C) 2007 Elsevier B.V. All rights reserved. English ELSEVIER ELECTRICAL CHARACTERISTICS FABRICATION Low-frequency noise characterization of ZnO nanorod back-gate field-effect transistor structure Article 10.1016/j.physe.2007.10.071 1 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.40, no.6, pp.2147 - 2149 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 40 6 2147 2149 scie scopus 000255717400116 2-s2.0-41349094655 Nanoscience & Nanotechnology Physics, Condensed Matter Science & Technology - Other Topics Physics Article; Proceedings Paper ELECTRICAL CHARACTERISTICS FABRICATION ZnO nanorod field-effect transistors low-frequency noise surface states