Hong, Kyoung Pyo Cho, Kyung-Hoon Jeong, Young Hun Nahm, Sahn Kang, Chong-Yun Yoon, Seok-Jin 2024-01-20T23:32:34Z 2024-01-20T23:32:34Z 2021-09-03 2008-04 0741-3106 https://pubs.kist.re.kr/handle/201004/133603 A small crystalline phase was formed in the Bi1.5ZnNb1.5O7 (BZN) film grown at 300 degrees C on TiN/SiO2/Si substrate using RF-magnetron sputtering. A 46-nm-thick BZN film exhibited a high capacitance density of 13.6 fF /mu m(2) at 100 kHz with a dielectric constant of 71, which did not change even in the gigahertz range (1-6 GHz). The quality factor was high, approximately 50, at 2.5 GHz. The leakage-current density was low, approximately 5.66 nA/cm(2), at 2 V. The quadratic voltage and temperature coefficients of capacitance were approximately 631 ppm/V-2 and 149 ppm/degrees C at 100 kHz, respectively. These results indicate that the BZN film grown on TiN substrate at 300 degrees C can be a good candidate material for metal-insulator-metal capacitors. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC DIELECTRIC-PROPERTIES Investigation on the electric properties of Bi1.5ZnNb1.5O7 thin films grown on TiN substrate for MIM capacitors Article 10.1109/LED.2008.918271 1 IEEE ELECTRON DEVICE LETTERS, v.29, no.4, pp.334 - 337 IEEE ELECTRON DEVICE LETTERS 29 4 334 337 scie scopus 000254225800017 2-s2.0-41749110260 Engineering, Electrical & Electronic Engineering Article DIELECTRIC-PROPERTIES Bi1.5ZnNb1.5O7 (BZN) high-k metal-insulator-metal (MIM) capacitor temperature coefficient of capacitance (TCC) voltage coefficient of capacitance (VCC)