Kim, J. Ham, J. Shim, W. Lee, K.-I. Jeon, K.J. Jeung, W.Y. Lee, W. 2024-01-20T23:32:46Z 2024-01-20T23:32:46Z 2021-09-02 2008-04 1225-0562 https://pubs.kist.re.kr/handle/201004/133613 The magneto-transport properties of an individual single crystalline Bi nanowire grown by a spontaneous growth method are reported. A four-terminal device based on an individual 400-nm-diameter nanowire was successfully fabricated using a plasma etching technique that removed an oxide layer that had formed on the surface of the nanowire. Large transverse ordinary magnetoresistance (1401%) and negative longitudinal ordinary magnetoresistance (-38%) were measured at 2 K. It was observed that the period of Shubnikov-de Haas oscillations in transverse geometry was 0.074T-1, 0.16T-1 and 0.77T-1, which is in good agreement with those of bulk Bi. However, it was found that the period of SdH oscillation in longitudinal geometry is 0.24T-1, which is larger than the value of 0.16T-1 reported for bulk Bi. The deviation is attributable to the spatial confinement arising from scattering at the nanowire surface boundary. Korean Electron energy levels Galvanomagnetic effects Metalloids Nanowires Plasma etching Shubnikov-de Haas effect Single crystals Landau energy level Spatial confinement effect Bismuth Shubnikov-de Haas oscillations in an individual single-crystalline semimetal bismuth nanowire Article 10.3740/MRSK.2008.18.2.103 1 Korean Journal of Materials Research, v.18, no.2, pp.103 - 106 Korean Journal of Materials Research 18 2 103 106 scopus kci 2-s2.0-40749114298 Article Electron energy levels Galvanomagnetic effects Metalloids Nanowires Plasma etching Shubnikov-de Haas effect Single crystals Landau energy level Spatial confinement effect Bismuth Landau energy level Magnetoresistance (MR) Shubnikov-de haas oscillations (SdH) Single-crystalline Bi nanowire Spatial confinement effect