Choi, Chang-Hak Choi, Joo-Young Cho, Kyung-Hoon Yoo, Myong-Jae Choi, Jae-Hong Nahm, Sahn Kang, Chong-Yun Yoon, Seok-Jin Lee, Hwack-Joo 2024-01-20T23:32:51Z 2024-01-20T23:32:51Z 2021-08-31 2008-04 0013-4651 https://pubs.kist.re.kr/handle/201004/133617 Bi6Ti5TeO22 (BTT) thin films were well formed on a Pt/Ti/SiO2/Si substrate using radio frequency magnetron sputtering. The dielectric constant (k) of the BTT films grown at room temperature was relatively high, approximately 54, and increased with increasing growth temperature to reach a maximum value of 107 for the film grown at 500 degrees C. In particular, the 120 nm thick BTT films grown at 200-300 degrees C showed high k-values of 63-69 with a low dissipation factor (<= 1.3%) due to the presence of the small BTT crystals (similar to 5 nm). The leakage current density of this film was very low, approximately 2 x 10(-10) A/cm(2), at 3 V. Therefore, the BTT film grown at low temperatures (<= 300 degrees C) is a promising candidate material for metal-insulator-metal capacitors which require low processing temperatures. (C) 2008 The Electrochemical Society. English ELECTROCHEMICAL SOC INC DIELECTRIC CHARACTERIZATION BI2O3-TIO2-TEO2 SYSTEM OXYGEN ATMOSPHERE PHASE-FORMATION TRANSISTORS CAPACITORS ELECTRONICS Structural and electrical properties of Bi6Ti5TeO22 thin films grown on Pt/Ti/SiO2/Si substrate Article 10.1149/1.2839566 1 JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.4, pp.G87 - G90 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 155 4 G87 G90 scie scopus 000253761700052 2-s2.0-40549124391 Electrochemistry Materials Science, Coatings & Films Electrochemistry Materials Science Article DIELECTRIC CHARACTERIZATION BI2O3-TIO2-TEO2 SYSTEM OXYGEN ATMOSPHERE PHASE-FORMATION TRANSISTORS CAPACITORS ELECTRONICS