Kim, S. -P. Lee, K. -R. Chung, Y. -C. Kim, Y. K. Doi, M. Sahashi, M. 2024-01-20T23:32:59Z 2024-01-20T23:32:59Z 2021-08-31 2008-04 0374-4884 https://pubs.kist.re.kr/handle/201004/133623 The deposition and the diffusion behaviors of Al atoms on Cu surfaces of various orientations were investigated by using classical molecular dynamics simulations and molecular static calculations. Al atoms with a kinetic energy of 0.1 eV were deposited at room temperature. On the Cu(001) surface, the deposited Al atoms tend to agglomerate only with adjacent atoms. In the case of the Cu(111) surface, surface diffusion of Al atoms is significant even as a time scale between two consecutive depositions (5 ps). Most deposited atoms are, thus, agglomerated near the surface step. In contrast, Al atoms deposited on Cu(011) hardly diffuse on the surfaces but intermix with the Cu atoms, resulting in an atomistically rough interface. These behaviors are consistent with changes in the activation barrier for a possible kinetic process that depends on the orientation of the substrate. English KOREAN PHYSICAL SOC CURRENT-CONFINED-PATH THIN-FILM GROWTH GIANT MAGNETORESISTANCE METALS MECHANISM CU(111) ADATOMS ALLOYS DECAY LAYER A molecular dynamics study of the deposition and the diffusion behaviors of Al on a Cu surface Article 10.3938/jkps.52.1241 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.52, no.4, pp.1241 - 1245 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 52 4 1241 1245 scie scopus kci ART001237132 000255004700013 2-s2.0-43149118804 Physics, Multidisciplinary Physics Article; Proceedings Paper CURRENT-CONFINED-PATH THIN-FILM GROWTH GIANT MAGNETORESISTANCE METALS MECHANISM CU(111) ADATOMS ALLOYS DECAY LAYER MD simulation Cu-Al surface diffusion thin film growth