Kang, Hong Seong Kim, Gun Hee Lim, Sung Hoon Chang, Hyun Woo Kim, Jong Hoon Lee, Sang Yeol 2024-01-20T23:33:09Z 2024-01-20T23:33:09Z 2021-09-03 2008-03-31 0040-6090 https://pubs.kist.re.kr/handle/201004/133630 ZnO thin films were deposited on (0001) Al2O3 substrates depending on oxygen partial pressure by pulsed laser deposition. Optical properties of ZnO were investigated by photoluminescence (PL). The relationship between PL and electron concentration has been investigated. Origin of the dominant ultraviolet (UV) emission in ZnO thin film measured at room temperature was identified as a free electron-neutral-acceptor transition (eA(0)) through temperature dependence of PL measurement. The UV emission intensity at room temperature is related to variation of electron concentration because a free-electron-neutral-acceptor transition (eA(0)) as origin of UV emission at room temperature is related to impurity concentration of ZnO. (c) 2007 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA P-TYPE ZNO PHOTOLUMINESCENCE FABRICATION Relationship between ultraviolet emission and electron concentration of ZnO thin films Article 10.1016/j.tsf.2007.08.084 1 THIN SOLID FILMS, v.516, no.10, pp.3147 - 3151 THIN SOLID FILMS 516 10 3147 3151 scie scopus 000254634600053 2-s2.0-39649091230 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article P-TYPE ZNO PHOTOLUMINESCENCE FABRICATION ZnO ultraviolet emission electron concentration