Shim, Juno Yoon, Ho Gyu Na, Sang-Hyun Kim, Insun Kwak, Soonjong 2024-01-20T23:33:17Z 2024-01-20T23:33:17Z 2021-09-03 2008-03-25 0257-8972 https://pubs.kist.re.kr/handle/201004/133637 Thin silicon oxynitride (SiOxNy) has been deposited for a gas barrier layer on the surface of poly(ether sulfone) film using plasma-enhanced chemical vapor deposition (PECVD) of a mixture of hexamethyldisiloxane (HMDSO) and ammonia. The chemical structure of the deposited layer varied from organic to inorganic structures depending on RF plasma input power applied to the reaction system. A silicon-based undercoat layer, which has an organic/inorganic hybrid structure, was used as an interfacial buffer layer between the organic PES and inorganic SiOxNy layer. With the help of the undercoat layer, the dense inorganic SiOxNy layer gave a superior oxygen barrier property of 0.2 cm(3)/m(2) day at a critical coating thickness of ca. 20 nm. In a highly stressed SiOxNy film, the effect of the undercoat layer was remarkable in preventing crack formation during bending tests. (C) 2007 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA OXYGEN OXIDE TETRAMETHOXYSILANE MIXTURE FILMS Silicon oxynitride gas barrier coatings on poly(ether sulfone) by plasma-enhanced chemical vapor deposition Article 10.1016/j.surfcoat.2007.10.020 1 SURFACE & COATINGS TECHNOLOGY, v.202, no.13, pp.2844 - 2849 SURFACE & COATINGS TECHNOLOGY 202 13 2844 2849 scie scopus 000254763600004 2-s2.0-44249123820 Materials Science, Coatings & Films Physics, Applied Materials Science Physics Article OXYGEN OXIDE TETRAMETHOXYSILANE MIXTURE FILMS flexible display plastic substrate poly(ether sulfone) gas barrier silicon oxynitride undercoat