Kim, Kyoung Chan Han, Il Ki Yoo, Young Chae Lee, Jung Il Sung, Yun Mo Kim, Tae Geun 2024-01-20T23:34:46Z 2024-01-20T23:34:46Z 2021-09-03 2008-03 1536-125X https://pubs.kist.re.kr/handle/201004/133707 We report the optical characteristics and the linewidth enhancement factor (a-factor) of InAs/GaAs quantum dot (QD) laser diodes (LDs) with a 5-mu m-wide stripe and 1-mm-long cavity. Continuous wave (CW) operation of the laser yielded a kink-free output power of 160 mW with an external efficiency of 0.35 W/A. The threshold current was 28 mA and the lasing occurred at 1286 nm, solely at the ground state (GS) up to a current of 345 mA, without switching to the excited state (ES). Then, to estimate the a-factor of the LDs, we investigated the differential gain and wavelength shift versus the current. The differential gain was 2.37 cm(-1)/mA at 1286 nm, and the wavelength shift was 0.00046 nm/mA, which resulted in an alpha-factor of 0.057 at 1286 nm. The a-factor decreased with increasing wavelength. To the best of our knowledge, this is the lowest value of the alpha-factor that has been reported so far, indicating that our QD-LD has excellent beam quality under high-power operation due to the elimination of the filamentation. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC ROOM-TEMPERATURE SEMICONDUCTOR-LASERS WELL LASERS GAIN Optical characteristics and the linewidth enhancement factor measured from InAs/GaAs quantum dot laser diodes Article 10.1109/TNANO.2008.914978 1 IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.7, no.2, pp.135 - 139 IEEE TRANSACTIONS ON NANOTECHNOLOGY 7 2 135 139 scie scopus 000254029500009 2-s2.0-41149091106 Engineering, Electrical & Electronic Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Engineering Science & Technology - Other Topics Materials Science Physics Article; Proceedings Paper ROOM-TEMPERATURE SEMICONDUCTOR-LASERS WELL LASERS GAIN differential gain laser diodes (LDs) linewidth enhancement factor quantum dot (QD)