Kim, Sang-Pil Lee, Seung-Cheol Lee, Kwang-Ryeol Chung, Yong-Chae 2024-01-20T23:34:47Z 2024-01-20T23:34:47Z 2021-09-03 2008-03 1359-6454 https://pubs.kist.re.kr/handle/201004/133708 Surface intermixing behavior during thin-film deposition in the Co-Al system was investigated on the atomic scale by three-dimensional classical molecular dynamics simulation. Asymmetry of the surface intermixing was observed: Al deposition on a Co substrate resulted in an Al thin-film with an atomically sharp interface, while a Co thin-film deposited on an Al substrate had an interfacial intermixing layer of B2 structure. This phenomenon is discussed in terms of the kinetics of atomic intermixing on the surface. A kinetic criterion for the atomic intermixing is whether the increased kinetic energy of the deposited atom near the surface is larger than the energy barrier to atomic intermixing on the surface. Local acceleration of the deposited atoms near the surface provides an explanation of the puzzling phenomenon of the significant intermixing under low-energy deposition conditions such as thermal evaporation or molecular beam epitaxy. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. English PERGAMON-ELSEVIER SCIENCE LTD ELASTIC-CONSTANTS INTERFACE AU COBALT BCC Asymmetric surface intermixing during thin-film growth in the Co-Al system: Role of local acceleration of the deposited atoms Article 10.1016/j.actamat.2007.10.058 1 ACTA MATERIALIA, v.56, no.5, pp.1011 - 1017 ACTA MATERIALIA 56 5 1011 1017 scie scopus 000254183000011 2-s2.0-39149123163 Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Materials Science Metallurgy & Metallurgical Engineering Article ELASTIC-CONSTANTS INTERFACE AU COBALT BCC multilayer thin-films deposition interface structure MD simulation