Lee, Byung Chul Kim, Moo Hyun Chandran, Jegatha Kim, Sang Kyung Shin, Hyun Joon Moon, Sung 2024-01-20T23:34:52Z 2024-01-20T23:34:52Z 2021-09-03 2008-03 1745-8080 https://pubs.kist.re.kr/handle/201004/133712 A new method for fabricating metal nanostructures, called 'the selective metal nanoscale etch method (SMNEM)', was developed. The SMNEM consists of a galvanic displacement and selective etching process. The process was found to be simple and produced a uniform surface with a self-controlled etch rate of 32.2 +/- 2.1 nm per cycle at a temperature and immersion time of 75 degrees C and 3 min, respectively. Since it is a wet chemical process, SMNEM provides high throughput and low temperature etching which is compatible with conventional semiconductor processes. Various metal nanostructures, such as nanostairs, nanogratings, and nanowires were produced using SMNEM. English TAYLOR & FRANCIS LTD LITHOGRAPHY DIMENSIONS Metal nanostructures fabricated by selective metal nanoscale etch method Article 10.1080/17458080802139892 1 JOURNAL OF EXPERIMENTAL NANOSCIENCE, v.3, no.1, pp.87 - 94 JOURNAL OF EXPERIMENTAL NANOSCIENCE 3 1 87 94 scie scopus 000255997300008 2-s2.0-46649098686 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Chemistry Science & Technology - Other Topics Materials Science Physics Article; Proceedings Paper LITHOGRAPHY DIMENSIONS NEMS nanoscale etch metal nanostructures galvanic displacement selective wet etching