Jung, Mi Lee, Seok Byun, Young Tae Jhon, Young Min Kim, Sun Ho Woo, Deok-Ha Mho, Sun-il 2024-01-20T23:34:55Z 2024-01-20T23:34:55Z 2021-09-03 2008-03 0026-2692 https://pubs.kist.re.kr/handle/201004/133715 Uniform arrays of nano-sized pore produced in porous alumina were transferred into InP substrates by inductively coupled plasma reactive ion etching (ICP-RIE). We observed a significant enhancement in the light output from InP substrate with nanohole arrays on the surface. Photoluminescence intensity of triangular arrays of air cylinders on InP substrate showed an enhancement up to 3 times compared with that from a raw InP substrate without such structure. The ICP-RIE technique using nanoporous alumina mask can be used as a prospective method in the fabrication of nanostructure materials for increasing the light output from semiconductor light emitting devices. (C) 2007 Elsevier Ltd. All rights reserved. English ELSEVIER SCI LTD ANODIC ALUMINA POROUS ALUMINA TEMPLATES GAAS MASK Characteristics and fabrication of nanohole array on InP semiconductor substrate using nanoporous alumina Article 10.1016/j.mejo.2007.07.107 1 MICROELECTRONICS JOURNAL, v.39, no.3-4, pp.526 - 528 MICROELECTRONICS JOURNAL 39 3-4 526 528 scie scopus 000255600600053 2-s2.0-40649105045 Engineering, Electrical & Electronic Nanoscience & Nanotechnology Engineering Science & Technology - Other Topics Article; Proceedings Paper ANODIC ALUMINA POROUS ALUMINA TEMPLATES GAAS MASK nanoporous alumina mask InP nanohole ICP-RIE photoluminescence