Koo, Hyun Cheol Yi, Hyunjung Chang, Joonyeon Han, Suk-Hee 2024-01-20T23:35:01Z 2024-01-20T23:35:01Z 2021-08-31 2008-03 0018-9464 https://pubs.kist.re.kr/handle/201004/133720 A traveling electron in the high mobility layer with asymmetric charge distribution induces an effective magnetic field that creates an imbalance of spin-up and spin-down energy levels. If a ferromagnet contacts a two-dimensional electron gas layer, the potential depends on the magnetization direction of the ferromagnetic detector. Two different potential levels can be assigned to "0" and "1" states of nonvolatile memory. This new concept of nonvolatile memory using spin-orbit interaction does not need complex magnetic tunneling layers and additional word writing lines. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC ELECTRON-GAS INJECTION DEVICES Bistable voltage mransition using spin-orbit interaction in a ferromagnet-semiconductor hybrid structure Article 10.1109/TMAG.2007.914512 1 IEEE TRANSACTIONS ON MAGNETICS, v.44, no.3, pp.419 - 422 IEEE TRANSACTIONS ON MAGNETICS 44 3 419 422 scie scopus 000253398500015 2-s2.0-39749155741 Engineering, Electrical & Electronic Physics, Applied Engineering Physics Article ELECTRON-GAS INJECTION DEVICES magnetic memories spin imbalance spin-orbit interaction two-dimensional electron gas