Park, B. G. Wunderlich, J. Williams, D. A. Joo, S. J. Jung, K. Y. Shin, K. H. Olejnik, K. Shick, A. B. Jungwirth, T. 2024-01-20T23:35:05Z 2024-01-20T23:35:05Z 2021-09-03 2008-02-29 0031-9007 https://pubs.kist.re.kr/handle/201004/133723 We report observations of tunneling anisotropic magnetoresitance (TAMR) in vertical tunnel devices with a ferromagnetic multilayer-(Co/Pt) electrode and a nonmagnetic Pt counterelectrode separated by an AlOx barrier. In stacks with the ferromagnetic electrode terminated by a Co film the TAMR magnitude saturates at 0.15% beyond which it shows only weak dependence on the magnetic field strength, bias voltage, and temperature. For ferromagnetic electrodes terminated by two monolayers of Pt we observe order(s) of magnitude enhancement of the TAMR and a strong dependence on field, temperature and bias. The discussion of experiments is based on relativistic ab initio calculations of magnetization orientation dependent densities of states of Co and Co/Pt model systems. English AMER PHYSICAL SOC ALLOYS JUNCTIONS Tunneling anisotropic magnetoresistance in Multilayer-(Co/Pt)/AlOx/Pt structures Article 10.1103/PhysRevLett.100.087204 1 PHYSICAL REVIEW LETTERS, v.100, no.8 PHYSICAL REVIEW LETTERS 100 8 scie scopus 000253764400058 2-s2.0-40849146054 Physics, Multidisciplinary Physics Article ALLOYS JUNCTIONS TAMR (Co/Pt) electrode SO coupling DOS anisotropy