Du Ahn, Byung Kim, Jong Hoon Kang, Hong Seong Lee, Choong Hee Oh, Sang Hoon Kim, Kyoung Won Jang, Gun-Eik Lee, Sang Yeol 2024-01-20T23:35:21Z 2024-01-20T23:35:21Z 2021-08-31 2008-02-15 0040-6090 https://pubs.kist.re.kr/handle/201004/133736 Highly conductive and transparent films of Ga-doped ZnO (GZO) have been prepared by pulsed laser deposition using a ZnO target with Ga2O3 dopant of 3 wt.% in content added. Films with resistivity as low as 3.3 x 10(-4) Omega cm and transmittance above 80% at the wavelength between 400 and 800 nm can be produced on glass substrate at room temperature. It is shown that a stable resistivity for use in oxidation ambient at high temperature can be attained for the films. The electrical and optical properties, as well as the thermal stability of resistivity, of GZO films were comparable to those of undoped ZnO films. (c) 2007 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA ZINC DEPOSITION TEMPERATURE PRESSURE GALLIUM Thermally stable, highly conductive, and transparent Ga-doped ZnO thin films Article 10.1016/j.tsf.2007.03.072 1 THIN SOLID FILMS, v.516, no.7, pp.1382 - 1385 THIN SOLID FILMS 516 7 1382 1385 scie scopus 000253830300016 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper ZINC DEPOSITION TEMPERATURE PRESSURE GALLIUM zinc oxide gallium electrical properties and measurements structural properties optical properties