Son, Dong-Ick Kim, Ji-Hwan Park, Dong-Hee Choi, Won Kook Li, Fushan Ham, Jung Hun Kim, Tae Whan 2024-01-20T23:35:25Z 2024-01-20T23:35:25Z 2021-09-03 2008-02-06 0957-4484 https://pubs.kist.re.kr/handle/201004/133740 The bistable effects of CdSe/ZnS nanoparticles embedded in a conducting poly N-vinylcarbazole (PVK) polymer layer by using flexible poly-vinylidene difluoride (PVDF) and polyethylene terephthalate (PET) substrates were investigated. Transmission electron microscopy (TEM) images revealed that CdSe/ZnS nanoparticles were formed inside the PVK polymer layer. Current-voltage (I-V) measurement on the Al/[CdSe/ZnS nanoparticles + PVK]/ITO/PVDF and Al/[CdSe/ZnS nanoparticles + PVK]/ITO/PET structures at 300 K showed a nonvolatile electrical bistability behavior with a flat-band voltage shift due to the existence of the CdSe/ZnS nanoparticles, indicative of trapping, storing and emission of charges in the electronic states of the CdSe nanoparticles. A bistable behavior for the fabricated organic bistable device (OBD) structures is described on the basis of the I-V results. These results indicate that OBDs fabricated by embedding inorganic CdSe/ZnS nanoparticles in a conducting polymer matrix on flexible substrates are prospects for potential applications in flexible nonvolatile flash memory devices. English IOP PUBLISHING LTD LIGHT-EMITTING-DIODES ELECTRICAL-PROPERTIES MEMORY CELLS QUANTUM-DOT NANOCRYSTALS BISTABILITY MECHANISM SYSTEM Nonvolatile flexible organic bistable devices fabricated utilizing CdSe/ZnS nanoparticles embedded in a conducting poly N-vinylcarbazole polymer layer Article 10.1088/0957-4484/19/05/055204 1 NANOTECHNOLOGY, v.19, no.5 NANOTECHNOLOGY 19 5 scie scopus 000252967100004 2-s2.0-38348998667 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article LIGHT-EMITTING-DIODES ELECTRICAL-PROPERTIES MEMORY CELLS QUANTUM-DOT NANOCRYSTALS BISTABILITY MECHANISM SYSTEM Organic bistability CdSe/ZnS quantum dot nonvolatile memory