Kang, KyongTae Kim, Il-Doo Lim, Mi-Hwa Kim, Ho-Gi Hong, Jae-Min 2024-01-21T00:01:29Z 2024-01-21T00:01:29Z 2021-09-03 2008-01-30 0040-6090 https://pubs.kist.re.kr/handle/201004/133811 We report on the dielectric properties and leakage current characteristics of 3 mol% Mn-doped Ba0.6Sr0.4TiO3 (BST) thin films post-annealed up to 600 degrees C following room temperature deposition. The suitability of 3 mol% Mn-doped EST films as gate insulators for low voltage ZnO thin film transistors (TFTs) is investigated. The dielectric constant of 3 mol% Mn-doped BST films increased from 24 at in-situ deposition up to 260 at an annealing temperature of 600 degrees C due to increased crystallinity and the formation of perovskite phase. The measured leakage current density of 2 3 mol% Mn-doped BST films remained on the order of 5 x 10(-9) to 10(-8) A/cm(2) without further reduction as the annealing temperature increased, thereby demonstrating significant improvement in the leakage current characteristics of in-situ grown Mn-doped BST films as compared to that (5 x 10(-4) A/cm(2) at 5 V) of pure BST films. All room temperature processed ZnO-TFTs using a 3 mol% Mn-doped BST gate insulator exhibited a field effect mobility of 1.0 cm(2)/Vs and low voltage device performance of less than 7 V (C) 2007 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA ELECTRICAL-PROPERTIES ORGANIC TRANSISTORS IMPROVEMENT Annealing effect on dielectric and leakage current characteristics of Mn-doped Ba0.6Sr0.4TiO3 thin films as gate insulators for low voltage ZnO thin film transistor Article 10.1016/j.tsf.2007.05.068 1 THIN SOLID FILMS, v.516, no.6, pp.1218 - 1222 THIN SOLID FILMS 516 6 1218 1222 scie scopus 000252980400055 2-s2.0-37349113175 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article ELECTRICAL-PROPERTIES ORGANIC TRANSISTORS IMPROVEMENT zinc oxide transistor gate insulator Mn doping barium strontium titanate electrical properties and measurements