Du Ahn, Byung Oh, Sang Hoon Lee, Choong Hee Kim, Gun Hee Kim, Hyun Jae Lee, Sang Yeol 2024-01-21T00:03:13Z 2024-01-21T00:03:13Z 2021-08-31 2007-12-01 0022-0248 https://pubs.kist.re.kr/handle/201004/133892 The effect of thermal annealing on the structural, chemical, electrical, and optical properties of Ga-doped ZnO (GZO) films was investigated in various ambients, such as oxygen, nitrogen, and forming gas (95% N-2 5% H,). The variation of these properties is thought to be related to the chemisorption and removal of adsorbed oxygen on the GZO film surface. The carrier concentration of the GZO films increased with heat treatment in the forming gas ambient. However, the carrier concentration of the GZO films decreased with heat treatment in oxygen and nitrogen. Annealing under forming gas, oxygen weakly absorbed on the GZO film was removed. Annealing under N- and O-rich conditions, chemisorption of oxygen was dominant. These results were clarified by comparatively analyzing the chemical states of oxygen on the surface of the GZO films. (C) 2007 Elsevier B.V. All rights reserved. English ELSEVIER ROOM-TEMPERATURE TRANSPARENT PHOTOCONDUCTIVITY MOBILITY Influence of thermal annealing ambient on Ga-doped ZnO thin films Article 10.1016/j.jcrysgro.2007.09.014 1 JOURNAL OF CRYSTAL GROWTH, v.309, no.2, pp.128 - 133 JOURNAL OF CRYSTAL GROWTH 309 2 128 133 scie scopus 000251803200003 2-s2.0-36048972012 Crystallography Materials Science, Multidisciplinary Physics, Applied Crystallography Materials Science Physics Article ROOM-TEMPERATURE TRANSPARENT PHOTOCONDUCTIVITY MOBILITY adsorption defects desorption doping semiconducting II-VI materials