Tark, S.J. Kang, M.G. Lee, S.H. Kim, W.M. Lim, H.-J. Kim, D. 2024-01-21T00:04:03Z 2024-01-21T00:04:03Z 2021-09-02 2007-12 1225-0562 https://pubs.kist.re.kr/handle/201004/133930 This study examined the effect of growth temperature on the electrical and optical properties of hydrogenated Al-doped zinc oxide (AZO:H) thin films deposited by rf magnetron sputtering using a ceramic target (98 wt.% ZnO, 2 wt.% Al2O3). Various AZO films on glass were prepared by changing the substrate temperature from room temperature to 200°C. It was shown that intentionally incorporated hydrogen plays an important role on the electrical properties of AZO : H films by increasing free carrier concentration. As a result, in the 2% H2 addition at the growth temperature of 150°C, resistivity of 3.21×10-4 Ω cm, mobility of 21.9 CM2/V-s, electric charge carrier concentration of 9.35×1020 CM-3 was obtained. The AZO: H films show a hexagonal wurtzite structure preferentially oriented in the (002) crystallographic direction. Korean Effect of growth temperature on the properties of hydrogenation Al-doped ZnO films Article 10.3740/MRSK.2007.17.12.629 1 Korean Journal of Materials Research, v.17, no.12, pp.629 - 633 Korean Journal of Materials Research 17 12 629 633 scopus kci ART001209925 2-s2.0-38049081542 Article Al-doped ZnO Hydrogenated Rf magnetron sputter TCO