Tae, Gikoan Eom, Jonghwa Song, Jindong Kim, Kwangyoun 2024-01-21T00:04:32Z 2024-01-21T00:04:32Z 2021-09-02 2007-12 0021-4922 https://pubs.kist.re.kr/handle/201004/133953 A magnetic tunnel transistor has been fabricated on top of a modulation-doped GaAs/AlGaAs heterostructure that provides a high-mobility two-dimensional electron gas. The emitter and base of the magnetic tunnel transistor consisted of a ferromagnetic metal, whereas the collector consisted of the two-dimensional electron gas. Spin polarized hot electrons from the emitter were filtered by the CoFe base layer and then injected into the collector, leading to a finite magnetocurrent ratio. The magnetocurrent ratio decreased as the hot electron energy was increased by increasing the bias voltage between the emitter and the base above a certain threshold voltage. We observed magnetocurrent ratios of similar to 27% at 17 K and similar to 2% at 300 K, indicating that spin-polarized hot electrons are injected into the two-dimensional electron gas from 17 K up to room temperature. English JAPAN SOC APPLIED PHYSICS ROOM-TEMPERATURE MAGNETOCURRENT Spin-polarized hot electron injection into two-dimensional electron gas by magnetic tunnel transistor Article 10.1143/JJAP.46.7717 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.46, no.12, pp.7717 - 7719 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46 12 7717 7719 scie scopus 000251828900026 2-s2.0-37549013367 Physics, Applied Physics Article ROOM-TEMPERATURE MAGNETOCURRENT magnetic tunnel transistor magnetocurrent spin injection hot electron