Wi, Jung-Sub Lee, Tae-Yon Kim, Hyun-Mi Lee, Hyo-Sung Nam, Sung-Wook Shin, Il Jae Shin, Kyung Ho Kim, Ki-Bum 2024-01-21T00:05:15Z 2024-01-21T00:05:15Z 2021-09-02 2007-11-05 0935-9648 https://pubs.kist.re.kr/handle/201004/133987 A method for forming sub-10 nm silicide dots is reported. Crystalline Pd2Si dots with a diameter of approximately 8 nm are formed on a pattern with a scale of a few tens of nanometers defined by electron-beam lithography (see figure, scale bar is 200 nm). English WILEY-V C H VERLAG GMBH HYDROGEN SILSESQUIOXANE LASER-BEAM NANOPARTICLES NANOLITHOGRAPHY NANOCRYSTALS Guided formation of a sub-10 nm silicide dot array on an area patterned by electron-beam lithography Article 10.1002/adma.200701043 1 ADVANCED MATERIALS, v.19, no.21, pp.3469 - + ADVANCED MATERIALS 19 21 3469 + scie scopus 000250992000005 2-s2.0-36249004923 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article HYDROGEN SILSESQUIOXANE LASER-BEAM NANOPARTICLES NANOLITHOGRAPHY NANOCRYSTALS dot array silicide e-beam lithography