Ren, Lingling Jeung, Won-Young Han, Hee-Chul Suh, Kiseok Shin, Jung H. Choi, Heon-Jin 2024-01-21T00:05:46Z 2024-01-21T00:05:46Z 2021-09-02 2007-11 0925-3467 https://pubs.kist.re.kr/handle/201004/134011 The optical activation of Si nanowires (SiNWs) by the coating of Er3+ doped binary silicon-aluminum oxides (Si-Al oxides) films derived from sol-gel solutions is reported. Continuous and crack-free Si-Al oxide film could be successfully coated onto an Si substrate where the SiNWs were grown. The strong Er3+ luminescence of 1.534 mu m from the SiNWs was observed at a high Er concentration (5 at.%). These results suggest that the Al-Si oxide film makes it possible to realize a strong Er3+ luminescence by excluding concentration quenching while at the same time improving the quality of film. (c) 2007 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV 1.5 MU-M AL2O3 FILMS ENERGY-TRANSFER PHOTOLUMINESCENCE LUMINESCENCE POWDERS Optical activation of Si nanowires by Er3+ doped binary Si-Al oxides films derived from sol-gel solutions Article 10.1016/j.optmat.2006.12.016 1 OPTICAL MATERIALS, v.30, no.3, pp.497 - 501 OPTICAL MATERIALS 30 3 497 501 scie scopus 000250629500025 2-s2.0-34948886123 Materials Science, Multidisciplinary Optics Materials Science Optics Article 1.5 MU-M AL2O3 FILMS ENERGY-TRANSFER PHOTOLUMINESCENCE LUMINESCENCE POWDERS Si nanowire sol-gel luminescence Er3+ doped silicon and aluminum oxides concentration quenching