Henry, Tania Kim, Kyungkon Ren, Zaiyuan Yerino, Christopher Han, Jung Tang, Hong X. 2024-01-21T00:30:23Z 2024-01-21T00:30:23Z 2021-08-31 2007-11 1530-6984 https://pubs.kist.re.kr/handle/201004/134027 We report the growth of horizontally aligned arrays and networks of GaN nanowires (NWs) as resonant components in nanoelectromechanical systems (NEMS). A combination of top-down selective area growth (SAG) and bottom-up vapor-liquid-solid (VLS) synthesis enables flexible fabrication of highly ordered nanowire arrays in situ with no postgrowth dispersion. Mechanical resonance of free-standing nanowires are measured, with quality factors (Q) ranging from 400 to 1000. We obtained a Young's modulus (E) of similar to 338 GPa from an array of NWs with varying diameters and lengths. The measurement allows detection of nanowire motion with a rotating frame and reveals dual fundamental resonant modes in two orthogonal planes. A universal ratio between the resonant frequencies of these two fundamental modes, irrespective of their dimensions, is observed and attributed to an isosceles cross section of GaN NWs. English AMER CHEMICAL SOC CHEMICAL-VAPOR-DEPOSITION EPITAXIAL LATERAL OVERGROWTH GAN NANOWIRES MECHANICAL RESONANCE CRYSTAL SYSTEMS Directed growth of horizontally aligned gallium nitride nanowires for nanoelectromechanical resonator Arrays Article 10.1021/nl071530x 1 NANO LETTERS, v.7, no.11, pp.3315 - 3319 NANO LETTERS 7 11 3315 3319 scie scopus 000251059800012 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article CHEMICAL-VAPOR-DEPOSITION EPITAXIAL LATERAL OVERGROWTH GAN NANOWIRES MECHANICAL RESONANCE CRYSTAL SYSTEMS 나노선 성장 GaN나노선