Jung, S. I. Yeo, H. Y. Yun, I. Leem, J. Y. Han, I. K. Kim, J. S. Lee, J. I. 2024-01-21T00:31:30Z 2024-01-21T00:31:30Z 2021-09-02 2007-10 0957-4522 https://pubs.kist.re.kr/handle/201004/134080 We report on the unusual behaviors of the optical properties for self-assembled InAs/GaAs quantum dots (QDs) by using photoluminescence (PL) spectroscopy. Distinctive double-emission QD peaks are observed in the PL spectra of the samples grown on high growth-temperature condition. From the excitation power-dependent and temperature-dependent PL measurements, these double-emission peaks are associated with the ground-state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated. English SPRINGER MOLECULAR-BEAM EPITAXY TEMPERATURE-DEPENDENCE GROWTH INGAAS Size distribution effects on self-assembled InAs quantum dots Article 10.1007/s10854-007-9205-9 1 JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.18, pp.S191 - S194 JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 18 S191 S194 scie scopus 000248803300038 2-s2.0-34547590341 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Engineering Materials Science Physics Article; Proceedings Paper MOLECULAR-BEAM EPITAXY TEMPERATURE-DEPENDENCE GROWTH INGAAS