Arpatzanis, N. Tassis, D. H. Dimitriadis, C. A. Charitidis, C. Song, J. D. Choi, W. J. Lee, J. I. 2024-01-21T00:31:46Z 2024-01-21T00:31:46Z 2021-08-31 2007-10 0268-1242 https://pubs.kist.re.kr/handle/201004/134092 Schottky contacts on n-type GaAs with embedded InAs quantum dots (QDs) were studied by current-voltage (I-V) and low-frequency noise measurements. For comparison, diodes not containing QDs were investigated as reference devices. A wide distribution of the ideality factor was observed, correlated with the level of the leakage current. Reverse I-V characteristics on the logarithmic scale indicate that the space-charge limited current dominates the carrier transport in these diodes. In all diodes, the reverse current noise spectra show 1/f behaviour, attributed to traps uniformly distributed in energy within the band-gap of the GaAs capping layer. Depth profiling measurements of the 1/f noise power spectral density demonstrate the impact of the QDs on these traps. In diodes containing QDs, in addition to the 1/f noise, a generation-recombination noise is found originating from a deep trap level localized in the vicinity of the QD plane. English IOP PUBLISHING LTD 1/F NOISE CONTACTS Current-voltage and noise characteristics of reverse-biased Au/n-GaAs Schottky diodes with embedded InAs quantum dots Article 10.1088/0268-1242/22/10/002 1 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.22, no.10, pp.1086 - 1091 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 22 10 1086 1091 scie scopus 000249756000002 2-s2.0-34748881901 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Condensed Matter Engineering Materials Science Physics Article 1/F NOISE CONTACTS InAs quantum dots noise