Park, Hyeong-Ho Jung, Sang-Bae Park, Hyung-Ho Kim, Tae Song Hill, Ross H. 2024-01-21T00:32:00Z 2024-01-21T00:32:00Z 2021-09-02 2007-09-20 0925-4005 https://pubs.kist.re.kr/handle/201004/134103 The electrical and ferroelectric properties of SBT thin films prepared by photochemical metal-organic deposition using photosensitive starting precursors were characterized. Fourier transform infra-red spectroscopic observation showed that a complete removal of organic groups was possible by UV exposure of spin-coated SBT precursor film at room temperature. The values of measured remnant polarization and leakage current density at 400 kV/cm were 5.8 mu C/cm(2) and 3.48 x 10(8) A/cm(2) after anneal treatment at 700 degrees C of the UV-exposed SBT precursor film and 10.8 mu c/cm(2) and 6.94 x 10(-8) A/cm(2) after anneal treatment at 750 degrees C. The SBT films annealed at 700 and 750 degrees C remained fatigue-free up to 10(10) switching cycles. (C) 2007 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA SOL-GEL PROCESS GRAIN-SIZE SRBI2TA2O9 GROWTH CRYSTALLIZATION MECHANISM EVOLUTION TITANATE LAYER SITU Electrical and ferroelectric properties of SBT thin films formed by photochemical metal-organic deposition Article 10.1016/j.snb.2006.12.046 1 SENSORS AND ACTUATORS B-CHEMICAL, v.126, no.1, pp.289 - 293 SENSORS AND ACTUATORS B-CHEMICAL 126 1 289 293 scie scopus 000250178800049 2-s2.0-34548503630 Chemistry, Analytical Electrochemistry Instruments & Instrumentation Chemistry Electrochemistry Instruments & Instrumentation Article; Proceedings Paper SOL-GEL PROCESS GRAIN-SIZE SRBI2TA2O9 GROWTH CRYSTALLIZATION MECHANISM EVOLUTION TITANATE LAYER SITU SBT photochemical reaction direct-patterning photoresist-free