Ahn, Misook Han, Yong-Hee Moon, Sung 2024-01-21T00:32:52Z 2024-01-21T00:32:52Z 2021-09-02 2007-09 1567-1739 https://pubs.kist.re.kr/handle/201004/134144 In this paper, we proposed a novel infrared absorbing structure for uncooled infrared detectors. The infrared absorber makes use of a quarter-wavelength structure composed of a dielectric layer, a protecting layer, an active layer, a supporting layer and a reflecting layer. Sputtered amorphous silicon is used as a dielectric layer because of its high refractive index. We fabricated the uncooled microbolometer with the proposed infrared absorbing structure by surface micromachining method. Then we characterized various bolometric properties such as thermal conductance, thermal time constant, responsivity and infrared absorptance. The fabricated bolometer showed the thermal conductance of 6.72 x 10(-7) W/K, the thermal mass of 4.43 x 10(-9) J/K, the thermal time constant of 6.6 ms and the responsivity of 7.76 x 10(3) V/W at 10 Hz chopper frequency and 9.22 mu A bias current. From the results, the estimated absorptance is about 80%. We expect that the proposed absorbing structure shows high infrared absorption and high performance of uncooled microbolometer. (C) 2007 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV MICROBOLOMETER A novel infrared absorbing structure for uncooled infrared detector Article 10.1016/j.cap.2006.12.006 1 CURRENT APPLIED PHYSICS, v.7, no.6, pp.617 - 621 CURRENT APPLIED PHYSICS 7 6 617 621 scie scopus kci other ART001075067 000248465700004 2-s2.0-34347258516 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article MICROBOLOMETER microbolometer infrared detector infrared absorption amorphous silicon