Kim, Woochul Kang, Hee Jae Noh, Sam Kyu Song, Jonghan Kim, Chul Sung 2024-01-21T00:33:11Z 2024-01-21T00:33:11Z 2021-09-02 2007-09 0304-8853 https://pubs.kist.re.kr/handle/201004/134159 The magnetic and structural properties of Fe ion-implanted GaN was investigated by various measurements. XRD results did not show any peaks associated with second phase formation. The magnetization curve at 5K showed ferromagnetic behavior for 900 degrees C-annealed sample. In zero-field-cooled (ZFC) and field-cooled (FC) magnetization measurements, the irreversibility and a cusp-like behavior of the ZFC curve were observed for 900 degrees C-annealed sample. These behaviors are typically observed in superparamagnetic or spin glass phase. While the temperature dependence magnetization of 800 degrees C-annealed sample showed non-Brillouin-like curve and it is not exhibited ferromagnetic hysteresis at 5K. In XPS measurement, the coexistence of metallic Fe (Fe-0) and Fe-N bond (Fe2+ and Fe3+) for Fe 2p core level spectra is observed in as-implanted sample. But 700-900 degrees C-annealed samples showed only Fe-N bond (Fe2+ and Fe3+) spectra. For Ga 3d core level spectra only Ga-N bonds showed for as implanted with 700-900 degrees C-annealed samples. From XPS results, it could be explained that magnetic property of our films originated from FeN structures. (c) 2007 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV THIN-FILMS SEMICONDUCTORS FERROMAGNETISM GROWTH CO CR GE Magnetic and structural properties of Fe ion-implanted GaN Article 10.1016/j.jmmm.2007.04.025 1 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.316, no.2, pp.E199 - E202 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 316 2 E199 E202 scie scopus 000248150000152 2-s2.0-34250332937 Materials Science, Multidisciplinary Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper THIN-FILMS SEMICONDUCTORS FERROMAGNETISM GROWTH CO CR GE ion implantation magnetic semiconductor