Lee, Min Seung Lee, Dong Uk Kim, Jae-Hoon Kim, Eun Kyu Kim, Won Mok Cho, Won-Ju 2024-01-21T00:33:40Z 2024-01-21T00:33:40Z 2021-08-31 2007-09 0021-4922 https://pubs.kist.re.kr/handle/201004/134182 Nano-floating-gate memory (NFGM) devices containing SiO2 layers embedded with nanoparticles were fabricated, and their electrical characteristics were evaluated. The Au nanoparticles were successfully fabricated by the horizontal sputtering and served as a charge storage node of the NFGM devices. The size and density of the Au nanoparticles were easily controlled by setting the sputtering thickness of the Au thin film used. The memory window of the fabricated NFGM devices on a silicon-on-insulator substrate was about 3 V at a gate bias of +/- 10 V. The feasibility of using Au nanoparticles dispersed in SiO2 oxide layers for NFGM device application was also presented. English INST PURE APPLIED PHYSICS SILICON NANOCRYSTALS LAYER Characteristics of nano-floating-gate memory with Au nanoparticles in SiO2 dielectrics Article 10.1143/JJAP.46.6202 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.46, no.9B, pp.6202 - 6204 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46 9B 6202 6204 scie scopus 000250066700019 2-s2.0-34648829978 Physics, Applied Physics Article; Proceedings Paper SILICON NANOCRYSTALS LAYER nanoparticle Au/SiO2 nonvolatile memory nano-floating-gate memory