Kim, Mooyoung Kim, Hyungsang Kim, Yongmin Jung, Woong Im, Hyunsik Jung, Kyooho Lee, Jeon-Kook 2024-01-21T00:33:44Z 2024-01-21T00:33:44Z 2021-08-31 2007-09 0374-4884 https://pubs.kist.re.kr/handle/201004/134185 The temperature dependence of resistive switching of Cr 0.2at%-doped SrZrO3 (Cr:SZO) thin films grown on SrRuO3/Si(100) substrates by using radio frequency sputtering has been studied over the temperature range between 300 K and 10 K. The film has a polycrystalline structure. Good and reproducible ON and OFF resistive switching is observed. While the low-resistance ON state show a metallic behavior, the high-resistance OFF current shows a thermal activation behavior. Using an Arrhenius plot, we estimated the barrier height of the initial (before forming) and the OFF states to be similar to 24.2 meV and similar to 2.14 meV, respectively. English KOREAN PHYSICAL SOC Temperature dependence of resistance switching in cr doped SrZrO3 thin films Article 10.3938/jkps.51.1089 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.51, no.3, pp.1089 - 1092 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 51 3 1089 1092 scie scopus kci ART001073795 000249505200038 2-s2.0-34948897515 Physics, Multidisciplinary Physics Article; Proceedings Paper resistive switching perovskite material non-volatile memory