Ren, Lingling Jeung, Won-Young Han, Hee-Chul Choi, Heon-Jin 2024-01-21T00:34:50Z 2024-01-21T00:34:50Z 2021-09-02 2007-08 1555-130X https://pubs.kist.re.kr/handle/201004/134237 Si and Ge are both important semiconducting electronic materials with indirect band gap. Long length of their nanowires exceeding 1 mu m, compared with the isolated nanocrystals, provides a very high area] density of Er ions. In addition, Yb ions are an useful sensitizer for the Er emission. Strong optical activations of Er-cloped and Er:Yb-codoped SiNWs and GeNWs by sol-gel methods are observed. The photoluminescence (PL) intensity of Er-cloped GeNWs is higher than that of Er-cloped SiNWs. Furthermore, Yb ions greatly improved the PL intensity of Er:Yb-codoped GeNWs, but they has no effect on the PL intensity of Er:Yb-codoped SiNWs. These differences are mainly due to the indirect gap nature of Si and Ge semiconductor. English AMER SCIENTIFIC PUBLISHERS MU-M LUMINESCENCE VISIBLE PHOTOLUMINESCENCE SILICON ERBIUM NANOCRYSTALS SENSITIZATION GROWTH IONS FILM Optical activation of Si and Ge nanowires codoping with Er: Yb rare earth by sol-gel methods Article 10.1166/jno.2007.204 1 JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.2, no.2, pp.191 - 196 JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS 2 2 191 196 scie scopus 000248739600004 2-s2.0-48249120445 Engineering, Electrical & Electronic Nanoscience & Nanotechnology Physics, Applied Engineering Science & Technology - Other Topics Physics Article MU-M LUMINESCENCE VISIBLE PHOTOLUMINESCENCE SILICON ERBIUM NANOCRYSTALS SENSITIZATION GROWTH IONS FILM optical activation Er Yb Ge nanowire Si nanowire photoluminescence