Kim, Hyun-Suk Hyun, Tae-Seon Kim, Ho-Gi Yun, Tae-Soon Lee, Jong-Chul Kim, Il-Doo 2024-01-21T00:34:55Z 2024-01-21T00:34:55Z 2021-09-02 2007-08 1385-3449 https://pubs.kist.re.kr/handle/201004/134241 (100) epitaxial Ba0.6Sr0.4TiO3 (BST) thin films were grown on Si substrates using a 9 nm thick SrO buffer layer. The phase shifter fabricated on BST films grown on a SrO buffered Si substrate showed a larger figure of merit (FOM) of 24.7 degrees/dB as a result of improving the phase tuning while retaining an appropriate insertion loss compared to that (15.3 degrees/dB) for the BST/MgO structure. This work demonstrates that a thin SrO buffer layer plays an important role in the successful integration of BST-based microwave tunable devices onto Si wafers. English SPRINGER MICROWAVE PROPERTIES HETEROSTRUCTURE INTEGRATION TA2O5 Structural and dielectric properties of epitaxial Ba0.6Sr0.4TiO3 thin films grown on Si substrates with thin SrO buffer layers Article 10.1007/s10832-007-9167-6 1 JOURNAL OF ELECTROCERAMICS, v.18, no.3-4, pp.305 - 309 JOURNAL OF ELECTROCERAMICS 18 3-4 305 309 scie scopus 000248625300018 2-s2.0-34547702403 Materials Science, Ceramics Materials Science Article MICROWAVE PROPERTIES HETEROSTRUCTURE INTEGRATION TA2O5 SrO BST phase shifter Si integration buffer layer