Ko, J. H. Kim, I. H. Kim, D. Lee, K. S. Lee, T. S. Cheong, B. Kim, W. M. 2024-01-21T00:35:27Z 2024-01-21T00:35:27Z 2021-09-02 2007-07-15 0169-4332 https://pubs.kist.re.kr/handle/201004/134266 Zn-Sn-O (ZTO) films with continuous compositional gradient of Sn 16-89 at.% were prepared by co-sputtering of two targets of ZnO and SnO2 in a combinatorial method. The resistivities of the ZTO films were severely dependent on oxygen content in sputtering gas and Zn/Sn ratio. Except for the films with Sn 16 at.%, all the as-prepared films were amorphous and maintaining the stable amorphous states up to the annealing temperature of 450 degrees C. Annealing at 650 degrees C resulted in crystallization for all the composition, in which ZnO, Zn2SnO4, ZnSnO3, and SnO2 peaks were appeared successively with increasing Sn content. Above Sn 54 at.%, the ZTO films were deduced to have a local structure mixed with ZnSnO3 and SnO2 phases which were more conductive and stable in thermal oxidation than ZnO and Zn2SnO4 phases. The lowest resistivity of 1.9 X 10(-3) Omega cm was obtained for the films with Sn 89 at.% when annealed at 450 degrees C in a vacuum. The carrier concentrations of the amorphous ZTO films that contained Sn contents higher than 36 at.% and annealed at 450 degrees C in a vacuum were proportional to the Sn contents, while the Hall mobilities were insensitive to Sn contents and leveling in the range of 23-26 cm(2)/V s. (c) 2007 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV OXIDE Transparent and conducting Zn-Sn-O thin films prepared by combinatorial approach Article 10.1016/j.apsusc.2007.03.036 1 APPLIED SURFACE SCIENCE, v.253, no.18, pp.7398 - 7403 APPLIED SURFACE SCIENCE 253 18 7398 7403 scie scopus 000247863800009 2-s2.0-34249882204 Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Chemistry Materials Science Physics Article OXIDE zinc tin oxide amorphous transparent conducting oxide thin film