박용욱 윤석진 2024-01-21T00:35:49Z 2024-01-21T00:35:49Z 2021-09-06 2007-07 1225-5475 https://pubs.kist.re.kr/handle/201004/134283 Single-wall carbon nanotube field-effect transistors (SWCNT FETs) of top gate structure were fabricated in aconventional metal-oxide-semiconductor field effect transistor (MOSFET) with gate electrodes above the conductionchannel separated from the channel by a thin SiO2as catalyst by thermal chemical vapor deposition (CVD). These top gate devices exhibit good electrical characteristics,including steep subthreshold slope and high conductance at low gate voltages. Our experiments show that CNTFETs maybe competitive with Si MOSFET for future nanoelectronic applications.Key Woods :CNTFETs, MOSFET, CVD, conductance, nanoelectronic1. . ....... (carbon nanotubes, CNTs). ... .... ..... ... 1991. ... ... (S.Iijima)... ...[1-2] .. ... ...... . 한국센서학회 탑 게이트 탄소나노튜브 트랜지스터 특성 연구 Properties of CNT field effect transistors using top gate electrodes Article 2 센서학회지, v.16, no.4, pp.313 - 318 센서학회지 16 4 313 318 kci ART001193234 CNTFETs MOSFET CVD conductance nanoelectronic