Jung, Mi Lee, Seok Jhon, Young Min Mho, Sun-il Cho, Jae-won Woo, Deokha 2024-01-21T01:00:35Z 2024-01-21T01:00:35Z 2021-09-02 2007-07 0021-4922 https://pubs.kist.re.kr/handle/201004/134303 Nanohole arrays with a sub-30 nm diameter were formed on GaAs substrates by inductively coupled plasma reactive-ion etching (ICP-RIE) using nanoporous alumina films as transfer masks. Whether the pore configurations of the alumina masks were transferred onto the GaAs substrates depended on the exposure time of ICP-RIE. In spite of the sub-30 nm pore diameter of the alumina masks, the ion bombardment induced in SiCl4/Ar gas by ICP-RIE properly responded on the GaAs substrate through the pores of the alumina masks. ICP-RIE using nanoporous alumina masks can be used as a prospective method to produce nanostructures. English JAPAN SOC APPLIED PHYSICS ANODIC ALUMINA NATURAL LITHOGRAPHY CARBON NANOTUBES NANOROD ARRAYS POROUS ALUMINA FABRICATION TEMPLATE SILICON Nanohole arrays with sub-30 nm diameter formed on GaAs using nanoporous alumina mask Article 10.1143/JJAP.46.4410 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.46, no.7A, pp.4410 - 4412 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46 7A 4410 4412 scie scopus 000248237100084 2-s2.0-34547850270 Physics, Applied Physics Article ANODIC ALUMINA NATURAL LITHOGRAPHY CARBON NANOTUBES NANOROD ARRAYS POROUS ALUMINA FABRICATION TEMPLATE SILICON nanoporous alumina mask GaAs nanohole nanolithography