Yi, Hyunjung Chang, Joonyeon 2024-01-21T01:00:41Z 2024-01-21T01:00:41Z 2021-08-31 2007-07 0022-2461 https://pubs.kist.re.kr/handle/201004/134307 We report a proximity-effect correction in electron beam patterning when fabricating a spin valve device with a junction size of 100 nm x 100 nm. Since the spin valve device has a stack of rnagnetic/non-magnetic/ magnetic metal multi-layers on oxidized Si substrate, its proximity effect should be appropriately corrected to realize a nano-scale junction. ZEP 520A was chosen as an electron beam resist because its dry-etching resistance is high enough to serve as an etching mask in the post-process. A set of proximity parameters, alpha, beta, and eta of ZEP 520A coated metal multi-layers was evaluated by using the doughnut pattern method. A simulation was carried out based on given proximity parameters in order to obtain effective dose factors of each segment of the exposure pattern. The junction with a desired shape and size on a metal multi-layer was successfully fabricated with a help of efficient proximity-effect correction. English SPRINGER MAGNETIC MULTILAYER CO/CU/CO PILLARS Proximity-effect correction in electron-beam lithography on metal multi-layers Article 10.1007/s10853-006-1288-9 1 JOURNAL OF MATERIALS SCIENCE, v.42, no.13, pp.5159 - 5164 JOURNAL OF MATERIALS SCIENCE 42 13 5159 5164 scie scopus 000247814800059 2-s2.0-34547359881 Materials Science, Multidisciplinary Materials Science Article MAGNETIC MULTILAYER CO/CU/CO PILLARS proximity effect electron beam lithography metal multilayer